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SK Hynix HMT451S6BFR8A-PB 4GB
Samsung M393A1G40EB1-CPB 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Samsung M393A1G40EB1-CPB 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 46
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    12.3 left arrow 11
    测试中的平均数值
Samsung M393A1G40EB1-CPB 8GB 需要考虑的原因
Samsung M393A1G40EB1-CPB 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Samsung M393A1G40EB1-CPB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 46
  • 读取速度，GB/s
    12.3 left arrow 11.0
  • 写入速度，GB/s
    7.8 left arrow 8.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2481

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Samsung M393A1G40EB1-CPB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B1K70CH0-CH9 8GB
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Corsair CMK32GX4M2L3000C15 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Corsair CMD16GX4M2B2800C14 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Micron Technology 8KTF51264AZ-1G9P1 4GB
内存RAM
Kingston 9905471-006.A00LF 4GB
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Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
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Corsair CM4B4G1J2400A14K 4GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
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Kingston 9965525-144.A00LF 8GB
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Kingston 9965662-012.A01G 16GB
内存RAM
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SK Hynix HMA84GL7AMR4N-UH 32GB
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Samsung M393A4K40CB1-CRC 32GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM