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SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA851U6CJR6N-VK 4GB

SpecTek Incorporated ?????????????????? 2GB vs SK Hynix HMA851U6CJR6N-VK 4GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.8
    测试中的平均数值
SK Hynix HMA851U6CJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851U6CJR6N-VK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 54
    左右 -69% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA851U6CJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 32
  • 读取速度，GB/s
    4,269.3 left arrow 16.8
  • 写入速度，GB/s
    1,781.8 left arrow 12.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    618 left arrow 2641

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

SK Hynix HMA851U6CJR6N-VK 4GB RAM的比较

G Skill Intl F4-3600C19-8GSXWB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
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内存RAM
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内存RAM
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Team Group Inc. Vulcan-1600 4GB
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Micron Technology 18ASF2G72PDZ-2G3A1 16GB
内存RAM