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takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
A-DATA Technology AO1P21FC8T1-BSKS 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
13.6
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
46
左右 -28% 更低的延时
更快的写入速度,GB/s
8.7
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
36
读取速度,GB/s
5,535.6
13.6
写入速度,GB/s
1,852.4
8.7
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
2231
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Kingston KHX318C10FR/8G 8GB
Kingston X75V1H-MIE 32GB
Kingston 99U5429-007.A00LF 2GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-4400C19-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C16-8GRB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-GEN D4H4GL30A8TS5 4GB
PNY Electronics PNY 2GB
Corsair CMT32GX4M2C3200C14 16GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kllisre DDR4-8GB 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Golden Empire CL15-15-15 D4-2400 4GB
报告一个错误
×
Bug description
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