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takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
45
46
左右 -2% 更低的延时
更快的读取速度,GB/s
6.9
5
测试中的平均数值
更快的写入速度,GB/s
6.3
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
45
读取速度,GB/s
5,535.6
6.9
写入速度,GB/s
1,852.4
6.3
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
1499
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Corsair CMSX16GX4M2A3200C22 8GB
Kingston KF2666C13D4/8GX 8GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMD8GX4M2B3600C18 4GB
AMD R538G1601U2S 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Samsung M393B1K70CH0-CH9 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Samsung M395T2863QZ4-CF76 1GB
Kingston 9965589-026.D00G 8GB
AMD AE34G1601U1 4GB
Avant Technology J642GU42J7240N4 16GB
Kingston KP4T2F-PSB 4GB
Mushkin 99[2/7/4]199[F/T] 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
报告一个错误
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Bug description
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