takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology CT16G4SFD8213.C16FBR 16GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 13.4

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 50

左右 -32% 更低的延时
更快的写入速度，GB/s

10.0 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 38
读取速度，GB/s

3,757.3 13.4
写入速度，GB/s

1,457.4 10.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 2439

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

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Kingston 99U5743-031.A00G 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

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Kingston KHX1600C9D3/8G 8GB

Corsair CM4X8GD3200C16K4 8GB

Corsair CM4X8GD3200C16K4 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB