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takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2800C15-8GTXG 8GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-2800C15-8GTXG 8GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
G Skill Intl F4-2800C15-8GTXG 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
14.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2800C15-8GTXG 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
50
左右 -100% 更低的延时
更快的写入速度,GB/s
11.0
1,457.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2800C15-8GTXG 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
25
读取速度,GB/s
3,757.3
14.7
写入速度,GB/s
1,457.4
11.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
557
2975
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2800C15-8GTXG 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMD64GX4M8A2666C15 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW16GX4M2K4000C19 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston HP24D4R7D4MAM-32 32GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Kingston KHX2400C11D3/4GX 4GB
Kingston 9905624-013.A00G 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Kingston 9905584-016.A00LF 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
G Skill Intl F4-3600C16-16GTRGC 16GB
Samsung M392B1K70CM0-YH9 8GB
Kingston 9965516-100.A00LF 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSX8GX4M1A2666C18 8GB
Samsung M393B5170FH0-CK0 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P26KC8T1-BC1S 8GB
报告一个错误
×
Bug description
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