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takeMS International AG TMS2GB264D083805EV 2GB
Kingston KHX2933C17D4/8G 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Kingston KHX2933C17D4/8G 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.8
    测试中的平均数值
Kingston KHX2933C17D4/8G 8GB 需要考虑的原因
Kingston KHX2933C17D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 50
    左右 -92% 更低的延时
  • 更快的写入速度，GB/s
    14.9 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 6400
    左右 3.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Kingston KHX2933C17D4/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 26
  • 读取速度，GB/s
    3,757.3 left arrow 17.8
  • 写入速度，GB/s
    1,457.4 left arrow 14.9
  • 内存带宽，mbps
    6400 left arrow 23400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    557 left arrow 3617

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston KHX2933C17D4/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD4AGU880-34A170X 16GB
Essencore Limited KD4AGU880-34A170X 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMT16GX4M2C3200C14 8GB
Corsair CMT16GX4M2C3200C14 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3600C16-8GTZSW 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Apacer Technology 78.DAGP2.4030B 16GB
Apacer Technology 78.DAGP2.4030B 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM