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takeMS International AG TMS2GB264D083805EV 2GB
Mushkin 99[2/7/4]208F 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Mushkin 99[2/7/4]208F 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Mushkin 99[2/7/4]208F 8GB

Mushkin 99[2/7/4]208F 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.9
    测试中的平均数值
Mushkin 99[2/7/4]208F 8GB 需要考虑的原因
Mushkin 99[2/7/4]208F 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 50
    左右 -150% 更低的延时
  • 更快的写入速度，GB/s
    15.0 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Mushkin 99[2/7/4]208F 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 20
  • 读取速度，GB/s
    3,757.3 left arrow 18.9
  • 写入速度，GB/s
    1,457.4 left arrow 15.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    557 left arrow 3230

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Mushkin 99[2/7/4]208F 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston ACR32D4U2S8HD-8X 8GB
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内存RAM
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Kingston 9905471-001.A01LF 2GB
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Kingston 9965596-031.B00G 8GB
内存RAM
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Kingston 99U5471-052.A00LF 8GB
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Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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Samsung M378A2K43BB1-CRC 16GB
内存RAM
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内存RAM
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Corsair CMSX16GX4M1A2666C18 16GB
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