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takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs SK Hynix HMA41GR7MFR4N-TF 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 52
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 10.1
    测试中的平均数值
SK Hynix HMA41GR7MFR4N-TF 8GB 需要考虑的原因
SK Hynix HMA41GR7MFR4N-TF 8GB
报告一个错误
  • 更快的写入速度，GB/s
    7.5 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 52
  • 读取速度，GB/s
    3,757.3 left arrow 10.1
  • 写入速度，GB/s
    1,457.4 left arrow 7.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    557 left arrow 2176

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

SK Hynix HMA41GR7MFR4N-TF 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CM4X8GF2666C18S2 8GB
Corsair CM4X8GF2666C18S2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston 9965669-009.A00G 8GB
Kingston 9965669-009.A00G 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
内存RAM