TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3200C16-8GTZRX 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.2

测试中的平均数值
更快的写入速度，GB/s

870.4 15.4

测试中的平均数值

G Skill Intl F4-3200C16-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 87

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C16-8GTZRX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 28
读取速度，GB/s

3,155.6 19.2
写入速度，GB/s

870.4 15.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-1333C9-4GIS 4GB

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InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

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SK Hynix HYMP112U64CP8-S6 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-3200C16-16GSXFB 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB