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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-4000C17-8GTZR 8GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
G Skill Intl F4-4000C17-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
20.2
测试中的平均数值
更快的写入速度,GB/s
870.4
18.4
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4000C17-8GTZR 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
87
左右 -263% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
24
读取速度,GB/s
3,155.6
20.2
写入速度,GB/s
870.4
18.4
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
417
4114
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
G Skill Intl F4-4000C17-8GTZR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2400C11-8GSR 8GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston 9905584-016.A00LF 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Kingston KF552C40-16 16GB
Apacer Technology 78.C1GMM.AUW0C 8GB
A-DATA Technology DOVF1B163G2G 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
AMD R538G1601U2S-UO 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Samsung M3 78T5663RZ3-CE6 2GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
报告一个错误
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Bug description
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