TwinMOS 8DHE3MN8-HATP 2GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 20.5

测试中的平均数值
更快的写入速度，GB/s

870.4 10.1

测试中的平均数值

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 87

左右 -67% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 52
读取速度，GB/s

3,155.6 20.5
写入速度，GB/s

870.4 10.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BD1339.M16F 4GB

V-Color Technology Inc. TC416G24D817 16GB

V-Color Technology Inc. TC416G24D817 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

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V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMK4GX4M1D2400C14 4GB

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Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB