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TwinMOS 8DHE3MN8-HATP 2GB
Kingston XCCT36-MIE 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs Kingston XCCT36-MIE 16GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 16.9
    测试中的平均数值
Kingston XCCT36-MIE 16GB 需要考虑的原因
Kingston XCCT36-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 87
    左右 -211% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Kingston XCCT36-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 28
  • 读取速度，GB/s
    3,155.6 left arrow 17.9
  • 写入速度，GB/s
    870.4 left arrow 16.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3795

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Kingston XCCT36-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F3-1866C8-8GTX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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Kingston XCCT36-MIE 16GB
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内存RAM
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Samsung M471B5173QH0-YK0 4GB
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内存RAM
A-DATA Technology DDR3 1333G 2GB
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Chun Well Technology Holding Limited D4U1636181DC 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
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SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
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Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Crucial Technology CT8G4DFS8266.M8FJ 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
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内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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UMAX Technology D4-2666-8GB-1024X8-L 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM