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TwinMOS 8DHE3MN8-HATP 2GB
Kingston XW21KG-MIE-NX 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs Kingston XW21KG-MIE-NX 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 10.4
    测试中的平均数值
Kingston XW21KG-MIE-NX 8GB 需要考虑的原因
Kingston XW21KG-MIE-NX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 87
    左右 -123% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Kingston XW21KG-MIE-NX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 39
  • 读取速度，GB/s
    3,155.6 left arrow 16.5
  • 写入速度，GB/s
    870.4 left arrow 10.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    417 left arrow 2680

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Kingston XW21KG-MIE-NX 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-2666C18-4GRS 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Kingston 99U5474-013.A00LF 2GB
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G Skill Intl F4-4000C18-8GTZRB 8GB
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内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
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Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
G Skill Intl F4-4800C19-8GTESC 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
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Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
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Samsung M393B2G70BH0-YK0 16GB
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Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3400C16-8GSXW 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
内存RAM