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TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix HMA42GR7MFR4N-TFTD 16GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的写入速度，GB/s
    870.4 left arrow 8.3
    测试中的平均数值
SK Hynix HMA42GR7MFR4N-TFTD 16GB 需要考虑的原因
SK Hynix HMA42GR7MFR4N-TFTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 87
    左右 -164% 更低的延时
  • 更快的读取速度，GB/s
    8.9 left arrow 3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 33
  • 读取速度，GB/s
    3,155.6 left arrow 8.9
  • 写入速度，GB/s
    870.4 left arrow 8.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 1946

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

SK Hynix HMA42GR7MFR4N-TFTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMH32GX4M4D3600C18 8GB
Corsair CMH32GX4M4D3600C18 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X16GC3000C15D4 16GB
Corsair CM4X16GC3000C15D4 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CM4X16GE2666Z16K4 16GB
Corsair CM4X16GE2666Z16K4 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMWX8GD3600C18W2D 8GB
Corsair CMWX8GD3600C18W2D 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905630-048.A00G 16GB
Kingston 9905630-048.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C15-8GTZKO 8GB
G Skill Intl F4-3200C15-8GTZKO 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM