TwinMOS 9DNPBNZB-TATP 4GB vs Crucial Technology CT8G4SFRA266.C4FE 8GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时

Crucial Technology CT8G4SFRA266.C4FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA266.C4FE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 12.5

测试中的平均数值
更快的写入速度，GB/s

10.0 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

12.5 15.3
写入速度，GB/s

8.4 10.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2180 2559

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

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Micron Technology 8ATF51264HZ-2G1A2 4GB

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PNY Electronics PNY 2GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Kingston 9905403-156.A00LF 2GB

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Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

G Skill Intl F4-2400C16-4GFX 4GB

G Skill Intl F4-2400C16-4GFX 4GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

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