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TwinMOS 9DNPBNZB-TATP 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB

TwinMOS 9DNPBNZB-TATP 4GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB

总分
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

差异 规格 评论

差异

TwinMOS 9DNPBNZB-TATP 4GB 需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 38
    左右 34% 更低的延时
Micron Technology 8ATF1G64AZ-3G2E1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2E1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 12.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
TwinMOS 9DNPBNZB-TATP 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 38
  • 读取速度，GB/s
    12.5 left arrow 14.7
  • 写入速度，GB/s
    8.4 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2180 left arrow 2908

TwinMOS 9DNPBNZB-TATP 4GB RAM的比较

Samsung M378B2873FHS-CH9 1GB
Kingston KHX2666C16/8G 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Corsair CMK32GX4M4A2666C16 8GB
内存RAM
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Corsair CMD8GX3M2A2933C12 4GB
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内存RAM