Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs AMD R744G2606U1S 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值

AMD R744G2606U1S 4GB

需要考虑的原因
AMD R744G2606U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

76 96

左右 -26% 更低的延时
更快的写入速度，GB/s

8.7 1,336.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

AMD R744G2606U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 76
读取速度，GB/s

2,725.2 15.7
写入速度，GB/s

1,336.0 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

438 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston XW21KG-MIE-NX 8GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston 99U5428-049.A00G 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

AMD R744G2606U1S 4GB

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Samsung M378T5663QZ3-CF7 2GB

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Corsair CMD16GX4M2K4133C19 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Apacer Technology GD2.0918CT.001 4GB

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OCZ OCZ2N800SR1G 1GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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SpecTek Incorporated 16G2666CL19 16GB

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Kingston ACR256X64D3S1333C9 2GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Crucial Technology BLS4G4D240FSB.8FBD2 4GB