Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 16ATF4G64HZ-3G2B2 32GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值

Micron Technology 16ATF4G64HZ-3G2B2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2B2 32GB

报告一个错误

低于PassMark测试中的延时，ns

32 96

左右 -200% 更低的延时
更快的写入速度，GB/s

13.7 1,336.0

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 32
读取速度，GB/s

2,725.2 15.7
写入速度，GB/s

1,336.0 13.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

438 3322

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-3600C16-8GTZ 8GB

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Crucial Technology CT8G4SFD824A.M16FB 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Kingston 9905678-028.A00G 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB