Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

Micron Technology 9ASF51272PZ-2G1AX 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 96

左右 -146% 更低的延时
更快的读取速度，GB/s

7.7 2

测试中的平均数值
更快的写入速度，GB/s

6.8 1,336.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 39
读取速度，GB/s

2,725.2 7.7
写入速度，GB/s

1,336.0 6.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

438 1768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2E4000C19 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

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Corsair CMK128GX4M4D3600C18 32GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology BL8G32C16U4R.M8FE1 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

Samsung M3 78T2863QZS-CF7 1GB

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