Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Samsung M378A1G43TB1-CTD 8GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 16.6

测试中的平均数值

Samsung M378A1G43TB1-CTD 8GB

需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 96

左右 -243% 更低的延时
更快的写入速度，GB/s

13.7 1,336.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Samsung M378A1G43TB1-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 28
读取速度，GB/s

2,725.2 16.6
写入速度，GB/s

1,336.0 13.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

438 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL8G30C15U4B.M8FE 8GB

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Crucial Technology BL8G30C15U4BL.M8FE1 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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G Skill Intl F4-2133C15-8GRR 8GB

G Skill Intl F4-2133C15-8GRR 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C9 8GB

Corsair CML16GX3M2A1600C9 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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Corsair CMD8GX4M2B4000C19 4GB

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Samsung M393B1K70CH0-CH9 8GB

Corsair CMT64GX4M4C3466C16 16GB

Corsair CMT64GX4M4C3466C16 16GB