Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs G Skill Intl F4-3600C18-16GVK 16GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

G Skill Intl F4-3600C18-16GVK 16GB

G Skill Intl F4-3600C18-16GVK 16GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

G Skill Intl F4-3600C18-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3600C18-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 44

左右 -19% 更低的延时
更快的读取速度，GB/s

17.5 10.9

测试中的平均数值
更快的写入速度，GB/s

15.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

G Skill Intl F4-3600C18-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 37
读取速度，GB/s

10.9 17.5
写入速度，GB/s

7.5 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1853 3529

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

G Skill Intl F4-3600C18-16GVK 16GB

G Skill Intl F4-3600C18-16GVK 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3200C16-8GVR 8GB

G Skill Intl F4-3200C16-8GVR 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT4G3S1339M.M16FKD 4GB

Crucial Technology CT4G3S1339M.M16FKD 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB