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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs SK Hynix HMA451U7MFR8N-TF 4GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
SK Hynix HMA451U7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
需要考虑的原因
SK Hynix HMA451U7MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
32
44
左右 -38% 更低的延时
更快的读取速度,GB/s
11.1
10.9
测试中的平均数值
更快的写入速度,GB/s
9.2
7.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
32
读取速度,GB/s
10.9
11.1
写入速度,GB/s
7.5
9.2
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1853
2449
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
SK Hynix HMA451U7MFR8N-TF 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Essencore Limited IM4AGU88N24-FFFHMB 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 99U5663-003.A00G 16GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Micron Technology 18HTF12872AY-800F1 1GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston 2GB-DDR2 800Mhz 2GB
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A-DATA Technology AD73I1C1674EV 4GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905703-009.A00G 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
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