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DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
2341
RAM
Samsung M395T6553EZ4-CE65 512MB
Latency
90
Read speed
3,435.7
Write speed
1,846.3
№
2342
RAM
Kingston UW728-IFA-INTC0S 1GB
Latency
90
Read speed
3,063.4
Write speed
1,815.1
№
2343
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351F72AMP4N3Y5 4GB
Latency
90
Read speed
2,664.5
Write speed
1,858.1
№
2344
RAM
SK Hynix HYMP151F72CP8D5-Y5 4GB
Latency
90
Read speed
3,030.3
Write speed
2,315.5
№
2345
RAM
Mushkin 991577 (996577) 2GB
Latency
90
Read speed
1,495.5
Write speed
1,106.6
№
2346
RAM
TwinMOS 8DRT5MK8-TATP 2GB
Latency
90
Read speed
2,208.3
Write speed
832.5
№
2347
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D2-Y5 2GB
Latency
90
Read speed
2,988.8
Write speed
2,036.2
№
2348
RAM
Kingston DT3B122GX4GBV-800I 4GB
Latency
91
Read speed
3,796.3
Write speed
2,091.8
№
2349
RAM
Qimonda 72T128420HFN3SB 1GB
Latency
91
Read speed
3,169.4
Write speed
1,979.1
№
2350
RAM
Micron Technology 36HTF1G72FZ667C1D4 8GB
Latency
91
Read speed
2,977.3
Write speed
1,661.0
№
2351
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F72CP8N3-Y5 512MB
Latency
91
Read speed
3,019.9
Write speed
2,038.2
№
2352
RAM
Samsung M395T5750EZ4-CE66 2GB
Latency
91
Read speed
3,032.3
Write speed
1,964.2
№
2353
RAM
Micron Technology 36HTF51272PY-667G1 4GB
Latency
91
Read speed
3,586.2
Write speed
2,210.2
№
2354
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8D2-Y5 1GB
Latency
91
Read speed
3,212.7
Write speed
1,849.5
№
2355
RAM
Micron Technology 4HTF3264AY-53ED3 256MB
Latency
91
Read speed
1,916.2
Write speed
1,163.6
№
2356
RAM
Samsung M4 70T2953EZ3-CF7 1GB
Latency
92
Read speed
1,531.1
Write speed
421.9
№
2357
RAM
Qimonda 64T128020EU2.5C 1GB
Latency
92
Read speed
2,880.0
Write speed
1,875.1
№
2358
RAM
Nanya Technology NT4GT72U4ND2BD-3C 4GB
Latency
92
Read speed
2,624.1
Write speed
1,929.5
№
2359
RAM
Micron Technology 18HF25672FD667E1N6 1GB
Latency
92
Read speed
2,887.1
Write speed
1,965.2
№
2360
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F
Latency
92
Read speed
2,998.5
Write speed
1,991.9
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Letzte Vergleiche
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.CAGP7.40C0B 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2133C15-8GNT 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300PHU1-1GBSA 1GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information JM2666HSB-8G 8GB
Kingston 99U5471-030.A00LF 8GB
Kingston 9905702-119.A00G 8GB
Corsair CMX4GX3M2A1600C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMW16GX4M2Z3600C18 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M378A1K43EB2-CWE 8GB
Mushkin MRA4S266GHHF32G 32GB
Kingston 9905469-143.A00LF 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 9905403-156.A00LF 2GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
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