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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2341
RAM
Samsung M395T6553EZ4-CE65 512MB
Latency
90
Read speed
3,435.7
Write speed
1,846.3
№
2342
RAM
Kingston UW728-IFA-INTC0S 1GB
Latency
90
Read speed
3,063.4
Write speed
1,815.1
№
2343
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351F72AMP4N3Y5 4GB
Latency
90
Read speed
2,664.5
Write speed
1,858.1
№
2344
RAM
SK Hynix HYMP151F72CP8D5-Y5 4GB
Latency
90
Read speed
3,030.3
Write speed
2,315.5
№
2345
RAM
Mushkin 991577 (996577) 2GB
Latency
90
Read speed
1,495.5
Write speed
1,106.6
№
2346
RAM
TwinMOS 8DRT5MK8-TATP 2GB
Latency
90
Read speed
2,208.3
Write speed
832.5
№
2347
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D2-Y5 2GB
Latency
90
Read speed
2,988.8
Write speed
2,036.2
№
2348
RAM
Kingston DT3B122GX4GBV-800I 4GB
Latency
91
Read speed
3,796.3
Write speed
2,091.8
№
2349
RAM
Qimonda 72T128420HFN3SB 1GB
Latency
91
Read speed
3,169.4
Write speed
1,979.1
№
2350
RAM
Micron Technology 36HTF1G72FZ667C1D4 8GB
Latency
91
Read speed
2,977.3
Write speed
1,661.0
№
2351
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F72CP8N3-Y5 512MB
Latency
91
Read speed
3,019.9
Write speed
2,038.2
№
2352
RAM
Samsung M395T5750EZ4-CE66 2GB
Latency
91
Read speed
3,032.3
Write speed
1,964.2
№
2353
RAM
Micron Technology 36HTF51272PY-667G1 4GB
Latency
91
Read speed
3,586.2
Write speed
2,210.2
№
2354
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8D2-Y5 1GB
Latency
91
Read speed
3,212.7
Write speed
1,849.5
№
2355
RAM
Micron Technology 4HTF3264AY-53ED3 256MB
Latency
91
Read speed
1,916.2
Write speed
1,163.6
№
2356
RAM
Samsung M4 70T2953EZ3-CF7 1GB
Latency
92
Read speed
1,531.1
Write speed
421.9
№
2357
RAM
Qimonda 64T128020EU2.5C 1GB
Latency
92
Read speed
2,880.0
Write speed
1,875.1
№
2358
RAM
Nanya Technology NT4GT72U4ND2BD-3C 4GB
Latency
92
Read speed
2,624.1
Write speed
1,929.5
№
2359
RAM
Micron Technology 18HF25672FD667E1N6 1GB
Latency
92
Read speed
2,887.1
Write speed
1,965.2
№
2360
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F
Latency
92
Read speed
2,998.5
Write speed
1,991.9
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Últimas comparações
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology GD2.1542WS.003 8GB
Kingston 9965525-140.A00LF 8GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
A-DATA Technology DDR3 1600 4GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMV4GX4M1A2666C18 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMK32GX4M4K4333C19 8GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Kingston 99U5474-013.A00LF 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Micron Technology 16JTF1G64AZ-1G6E1 8GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Kingston 9965662-016.A00G 16GB
Corsair CM4B8G2J2133A15S 8GB
Kingston K531R8-MIN 4GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Panram International Corporation W4N2400PS-8G 8GB
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