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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2341
RAM
Samsung M395T6553EZ4-CE65 512MB
Latency
90
Read speed
3,435.7
Write speed
1,846.3
№
2342
RAM
Kingston UW728-IFA-INTC0S 1GB
Latency
90
Read speed
3,063.4
Write speed
1,815.1
№
2343
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351F72AMP4N3Y5 4GB
Latency
90
Read speed
2,664.5
Write speed
1,858.1
№
2344
RAM
SK Hynix HYMP151F72CP8D5-Y5 4GB
Latency
90
Read speed
3,030.3
Write speed
2,315.5
№
2345
RAM
Mushkin 991577 (996577) 2GB
Latency
90
Read speed
1,495.5
Write speed
1,106.6
№
2346
RAM
TwinMOS 8DRT5MK8-TATP 2GB
Latency
90
Read speed
2,208.3
Write speed
832.5
№
2347
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D2-Y5 2GB
Latency
90
Read speed
2,988.8
Write speed
2,036.2
№
2348
RAM
Kingston DT3B122GX4GBV-800I 4GB
Latency
91
Read speed
3,796.3
Write speed
2,091.8
№
2349
RAM
Qimonda 72T128420HFN3SB 1GB
Latency
91
Read speed
3,169.4
Write speed
1,979.1
№
2350
RAM
Micron Technology 36HTF1G72FZ667C1D4 8GB
Latency
91
Read speed
2,977.3
Write speed
1,661.0
№
2351
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F72CP8N3-Y5 512MB
Latency
91
Read speed
3,019.9
Write speed
2,038.2
№
2352
RAM
Samsung M395T5750EZ4-CE66 2GB
Latency
91
Read speed
3,032.3
Write speed
1,964.2
№
2353
RAM
Micron Technology 36HTF51272PY-667G1 4GB
Latency
91
Read speed
3,586.2
Write speed
2,210.2
№
2354
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8D2-Y5 1GB
Latency
91
Read speed
3,212.7
Write speed
1,849.5
№
2355
RAM
Micron Technology 4HTF3264AY-53ED3 256MB
Latency
91
Read speed
1,916.2
Write speed
1,163.6
№
2356
RAM
Samsung M4 70T2953EZ3-CF7 1GB
Latency
92
Read speed
1,531.1
Write speed
421.9
№
2357
RAM
Qimonda 64T128020EU2.5C 1GB
Latency
92
Read speed
2,880.0
Write speed
1,875.1
№
2358
RAM
Nanya Technology NT4GT72U4ND2BD-3C 4GB
Latency
92
Read speed
2,624.1
Write speed
1,929.5
№
2359
RAM
Micron Technology 18HF25672FD667E1N6 1GB
Latency
92
Read speed
2,887.1
Write speed
1,965.2
№
2360
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F
Latency
92
Read speed
2,998.5
Write speed
1,991.9
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Последние сравнения
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9905711-002.A00G 4GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C15-8GTZSK 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M378A1G43TB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3200C15 4GB
Kingston 99U5474-010.A00LF 2GB
Kingston KHX2133C14/8G 8GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMK16GX4M1C3000C16 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4000C19-16GTZR 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2400C15-16GFX 16GB
Kingston 9905471-071.A00LF 8GB
Kingston 9905678-110.A00G 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Apacer Technology D12.2324CS.001 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
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