RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1を選択
RAM 2を選択
比較する
DDR2 RAMリスト
すべてのメモリモジュール、レイテンシーの高い順に並べ替え
№
帯域幅
レイテンシー、ns
読み出し速度、GB/s
書き込み速度、GB/秒
№
2341
RAM
Samsung M395T6553EZ4-CE65 512MB
Latency
90
Read speed
3,435.7
Write speed
1,846.3
№
2342
RAM
Kingston UW728-IFA-INTC0S 1GB
Latency
90
Read speed
3,063.4
Write speed
1,815.1
№
2343
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351F72AMP4N3Y5 4GB
Latency
90
Read speed
2,664.5
Write speed
1,858.1
№
2344
RAM
SK Hynix HYMP151F72CP8D5-Y5 4GB
Latency
90
Read speed
3,030.3
Write speed
2,315.5
№
2345
RAM
Mushkin 991577 (996577) 2GB
Latency
90
Read speed
1,495.5
Write speed
1,106.6
№
2346
RAM
TwinMOS 8DRT5MK8-TATP 2GB
Latency
90
Read speed
2,208.3
Write speed
832.5
№
2347
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D2-Y5 2GB
Latency
90
Read speed
2,988.8
Write speed
2,036.2
№
2348
RAM
Kingston DT3B122GX4GBV-800I 4GB
Latency
91
Read speed
3,796.3
Write speed
2,091.8
№
2349
RAM
Qimonda 72T128420HFN3SB 1GB
Latency
91
Read speed
3,169.4
Write speed
1,979.1
№
2350
RAM
Micron Technology 36HTF1G72FZ667C1D4 8GB
Latency
91
Read speed
2,977.3
Write speed
1,661.0
№
2351
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F72CP8N3-Y5 512MB
Latency
91
Read speed
3,019.9
Write speed
2,038.2
№
2352
RAM
Samsung M395T5750EZ4-CE66 2GB
Latency
91
Read speed
3,032.3
Write speed
1,964.2
№
2353
RAM
Micron Technology 36HTF51272PY-667G1 4GB
Latency
91
Read speed
3,586.2
Write speed
2,210.2
№
2354
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8D2-Y5 1GB
Latency
91
Read speed
3,212.7
Write speed
1,849.5
№
2355
RAM
Micron Technology 4HTF3264AY-53ED3 256MB
Latency
91
Read speed
1,916.2
Write speed
1,163.6
№
2356
RAM
Samsung M4 70T2953EZ3-CF7 1GB
Latency
92
Read speed
1,531.1
Write speed
421.9
№
2357
RAM
Qimonda 64T128020EU2.5C 1GB
Latency
92
Read speed
2,880.0
Write speed
1,875.1
№
2358
RAM
Nanya Technology NT4GT72U4ND2BD-3C 4GB
Latency
92
Read speed
2,624.1
Write speed
1,929.5
№
2359
RAM
Micron Technology 18HF25672FD667E1N6 1GB
Latency
92
Read speed
2,887.1
Write speed
1,965.2
№
2360
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F
Latency
92
Read speed
2,998.5
Write speed
1,991.9
«
115
116
117
118
119
120
»
最新の比較
Kingston 9905403-061.A00LF 2GB
Kingston 9965640-016.A00G 32GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Kingston 9965525-140.A00LF 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
A-DATA Technology DQKD1A08 1GB
Corsair CMD16GX4M4C3200C15 4GB
Kingston KVR533D2N4 512MB
Corsair CMT16GX4M2Z3200C16 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CB8GU2400.C8D 8GB
Kingston ACR512X64D3S13C9G 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMR32GX4M2C3000C16 16GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA851S6CJR6N-XN 4GB
PNY Electronics PNY 2GB
Kingston 9905700-012.A00G 8GB
Kingston KP223C-ELD 2GB
Corsair CMW32GX4M4Z3200C16 8GB
Kingston 99U5403-050.A00LF 4GB
Samsung M471A4G43BB1-CWE 32GB
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
バグを報告する
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
