RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
2341
RAM
Samsung M395T6553EZ4-CE65 512MB
Latency
90
Read speed
3,435.7
Write speed
1,846.3
№
2342
RAM
Kingston UW728-IFA-INTC0S 1GB
Latency
90
Read speed
3,063.4
Write speed
1,815.1
№
2343
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351F72AMP4N3Y5 4GB
Latency
90
Read speed
2,664.5
Write speed
1,858.1
№
2344
RAM
SK Hynix HYMP151F72CP8D5-Y5 4GB
Latency
90
Read speed
3,030.3
Write speed
2,315.5
№
2345
RAM
Mushkin 991577 (996577) 2GB
Latency
90
Read speed
1,495.5
Write speed
1,106.6
№
2346
RAM
TwinMOS 8DRT5MK8-TATP 2GB
Latency
90
Read speed
2,208.3
Write speed
832.5
№
2347
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D2-Y5 2GB
Latency
90
Read speed
2,988.8
Write speed
2,036.2
№
2348
RAM
Kingston DT3B122GX4GBV-800I 4GB
Latency
91
Read speed
3,796.3
Write speed
2,091.8
№
2349
RAM
Qimonda 72T128420HFN3SB 1GB
Latency
91
Read speed
3,169.4
Write speed
1,979.1
№
2350
RAM
Micron Technology 36HTF1G72FZ667C1D4 8GB
Latency
91
Read speed
2,977.3
Write speed
1,661.0
№
2351
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F72CP8N3-Y5 512MB
Latency
91
Read speed
3,019.9
Write speed
2,038.2
№
2352
RAM
Samsung M395T5750EZ4-CE66 2GB
Latency
91
Read speed
3,032.3
Write speed
1,964.2
№
2353
RAM
Micron Technology 36HTF51272PY-667G1 4GB
Latency
91
Read speed
3,586.2
Write speed
2,210.2
№
2354
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8D2-Y5 1GB
Latency
91
Read speed
3,212.7
Write speed
1,849.5
№
2355
RAM
Micron Technology 4HTF3264AY-53ED3 256MB
Latency
91
Read speed
1,916.2
Write speed
1,163.6
№
2356
RAM
Samsung M4 70T2953EZ3-CF7 1GB
Latency
92
Read speed
1,531.1
Write speed
421.9
№
2357
RAM
Qimonda 64T128020EU2.5C 1GB
Latency
92
Read speed
2,880.0
Write speed
1,875.1
№
2358
RAM
Nanya Technology NT4GT72U4ND2BD-3C 4GB
Latency
92
Read speed
2,624.1
Write speed
1,929.5
№
2359
RAM
Micron Technology 18HF25672FD667E1N6 1GB
Latency
92
Read speed
2,887.1
Write speed
1,965.2
№
2360
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F
Latency
92
Read speed
2,998.5
Write speed
1,991.9
«
115
116
117
118
119
120
»
最新比较
Kingston HP669238-071-HYC 4GB
Kingston ACR21D4S15HAG/8G 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Apacer Technology GD2.111881.002 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M378A5244CB0-CTD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905701-022.A00G 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905678-177.A00G 8GB
Corsair VS1GB800D2 1GB
SK Hynix HMA81GU6CJR8N-VK 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
KingSpec KingSpec 16GB
Kingston 99U5458-008.A00LF 4GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
A-DATA Technology DDR2 800G 2GB
Kingston XWM8G1-MIE 32GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMD32GX4M4B3333C16 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C14-8GTRG 8GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
