RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR2 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
2341
RAM
Samsung M395T6553EZ4-CE65 512MB
Latency
90
Read speed
3,435.7
Write speed
1,846.3
№
2342
RAM
Kingston UW728-IFA-INTC0S 1GB
Latency
90
Read speed
3,063.4
Write speed
1,815.1
№
2343
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP351F72AMP4N3Y5 4GB
Latency
90
Read speed
2,664.5
Write speed
1,858.1
№
2344
RAM
SK Hynix HYMP151F72CP8D5-Y5 4GB
Latency
90
Read speed
3,030.3
Write speed
2,315.5
№
2345
RAM
Mushkin 991577 (996577) 2GB
Latency
90
Read speed
1,495.5
Write speed
1,106.6
№
2346
RAM
TwinMOS 8DRT5MK8-TATP 2GB
Latency
90
Read speed
2,208.3
Write speed
832.5
№
2347
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D2-Y5 2GB
Latency
90
Read speed
2,988.8
Write speed
2,036.2
№
2348
RAM
Kingston DT3B122GX4GBV-800I 4GB
Latency
91
Read speed
3,796.3
Write speed
2,091.8
№
2349
RAM
Qimonda 72T128420HFN3SB 1GB
Latency
91
Read speed
3,169.4
Write speed
1,979.1
№
2350
RAM
Micron Technology 36HTF1G72FZ667C1D4 8GB
Latency
91
Read speed
2,977.3
Write speed
1,661.0
№
2351
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F72CP8N3-Y5 512MB
Latency
91
Read speed
3,019.9
Write speed
2,038.2
№
2352
RAM
Samsung M395T5750EZ4-CE66 2GB
Latency
91
Read speed
3,032.3
Write speed
1,964.2
№
2353
RAM
Micron Technology 36HTF51272PY-667G1 4GB
Latency
91
Read speed
3,586.2
Write speed
2,210.2
№
2354
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8D2-Y5 1GB
Latency
91
Read speed
3,212.7
Write speed
1,849.5
№
2355
RAM
Micron Technology 4HTF3264AY-53ED3 256MB
Latency
91
Read speed
1,916.2
Write speed
1,163.6
№
2356
RAM
Samsung M4 70T2953EZ3-CF7 1GB
Latency
92
Read speed
1,531.1
Write speed
421.9
№
2357
RAM
Qimonda 64T128020EU2.5C 1GB
Latency
92
Read speed
2,880.0
Write speed
1,875.1
№
2358
RAM
Nanya Technology NT4GT72U4ND2BD-3C 4GB
Latency
92
Read speed
2,624.1
Write speed
1,929.5
№
2359
RAM
Micron Technology 18HF25672FD667E1N6 1GB
Latency
92
Read speed
2,887.1
Write speed
1,965.2
№
2360
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F
Latency
92
Read speed
2,998.5
Write speed
1,991.9
«
115
116
117
118
119
120
»
Ultimi confronti
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHX2933C17S4/16G 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905663-005.A00G 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK128GX4M8A2400C14 16GB
TwinMOS 8DHE3MN8-HATP 2GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Kingston 9965525-155.A00LF 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
AMD R538G1601U2S 8GB
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited KD48GS88J-26N1900 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905712-009.A00G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905624-013.A00G 8GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Segnala un bug
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Polski 
中文 
日本語 
