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DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
2481
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8D2-Y5 1GB
Latency
108
Read speed
3,301.1
Write speed
1,941.0
№
2482
RAM
Elpida EBE21UE8AESA-8G-E 2GB
Latency
108
Read speed
2,008.9
Write speed
1,911.7
№
2483
RAM
Kingston GM431-QAA-INTD1F 2GB
Latency
109
Read speed
2,775.5
Write speed
1,716.3
№
2484
RAM
Samsung M395T1G60QJ4-CE68 8GB
Latency
109
Read speed
2,867.7
Write speed
2,247.1
№
2485
RAM
Samsung M395T2863QZ4-CE65 512MB
Latency
109
Read speed
3,034.2
Write speed
1,969.9
№
2486
RAM
Qimonda 72T256220EP3SB2 2GB
Latency
109
Read speed
3,211.5
Write speed
2,505.9
№
2487
RAM
Micron Technology 36HTF25672PY-667F1 2GB
Latency
109
Read speed
3,049.1
Write speed
2,981.1
№
2488
RAM
Samsung M395T6553EZ4-CE66 512MB
Latency
109
Read speed
3,351.5
Write speed
1,831.1
№
2489
RAM
Qimonda 72T512920EP3SC2 4GB
Latency
109
Read speed
2,683.4
Write speed
2,554.2
№
2490
RAM
SK Hynix HYMP125F72CP8D3-Y5 2GB
Latency
109
Read speed
2,441.0
Write speed
1,719.3
№
2491
RAM
Smart Modular SG2567FBD12851HCDL 1GB
Latency
109
Read speed
2,995.0
Write speed
2,252.9
№
2492
RAM
Nanya Technology NT2GT72U4NA3BN-3C 2GB
Latency
110
Read speed
2,702.3
Write speed
1,646.3
№
2493
RAM
Micron Technology 18HF25672FD667E1D4 1GB
Latency
110
Read speed
3,172.2
Write speed
1,974.7
№
2494
RAM
Samsung M395T5663CZ4-CE66 1GB
Latency
110
Read speed
2,787.2
Write speed
2,144.4
№
2495
RAM
SK Hynix HYMP125F72CP8N3-Y5 2GB
Latency
110
Read speed
3,116.2
Write speed
2,090.1
№
2496
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8E4-Y5 1GB
Latency
110
Read speed
3,319.3
Write speed
2,468.7
№
2497
RAM
Elpida EBE41FE4ABHD-6E-E 2GB
Latency
110
Read speed
3,285.1
Write speed
2,156.5
№
2498
RAM
Smart Modular SG2567FBD28452IBD5 2GB
Latency
110
Read speed
2,756.9
Write speed
2,129.8
№
2499
RAM
Elpida EBE81FF4ABHT-6E-E 8GB
Latency
110
Read speed
2,659.0
Write speed
2,030.8
№
2500
RAM
Samsung M3 93T5750EZA-CE6 2GB
Latency
111
Read speed
2,805.8
Write speed
2,375.6
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Letzte Vergleiche
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMR16GX4M2C 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CMW16GX4M2K3600C16 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9905458-017.A01LF 4GB
SK Hynix HMA851U6AFR6N-UH 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
SpecTek Incorporated ?????????????????? 2GB
Apacer Technology D12.2344DT.001 4GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9965600-005.A00G 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3466C16-8GTZR 8GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3000C16-16GVRB 16GB
Kingston 9905403-500.A01LF 8GB
G Skill Intl F4-3200C15-16GTZKO 16GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK16GX4M2B3733C17 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3000C15-4GVSB 4GB
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