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Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR2 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
2481
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8D2-Y5 1GB
Latency
108
Read speed
3,301.1
Write speed
1,941.0
№
2482
RAM
Elpida EBE21UE8AESA-8G-E 2GB
Latency
108
Read speed
2,008.9
Write speed
1,911.7
№
2483
RAM
Kingston GM431-QAA-INTD1F 2GB
Latency
109
Read speed
2,775.5
Write speed
1,716.3
№
2484
RAM
Samsung M395T1G60QJ4-CE68 8GB
Latency
109
Read speed
2,867.7
Write speed
2,247.1
№
2485
RAM
Samsung M395T2863QZ4-CE65 512MB
Latency
109
Read speed
3,034.2
Write speed
1,969.9
№
2486
RAM
Qimonda 72T256220EP3SB2 2GB
Latency
109
Read speed
3,211.5
Write speed
2,505.9
№
2487
RAM
Micron Technology 36HTF25672PY-667F1 2GB
Latency
109
Read speed
3,049.1
Write speed
2,981.1
№
2488
RAM
Samsung M395T6553EZ4-CE66 512MB
Latency
109
Read speed
3,351.5
Write speed
1,831.1
№
2489
RAM
Qimonda 72T512920EP3SC2 4GB
Latency
109
Read speed
2,683.4
Write speed
2,554.2
№
2490
RAM
SK Hynix HYMP125F72CP8D3-Y5 2GB
Latency
109
Read speed
2,441.0
Write speed
1,719.3
№
2491
RAM
Smart Modular SG2567FBD12851HCDL 1GB
Latency
109
Read speed
2,995.0
Write speed
2,252.9
№
2492
RAM
Nanya Technology NT2GT72U4NA3BN-3C 2GB
Latency
110
Read speed
2,702.3
Write speed
1,646.3
№
2493
RAM
Micron Technology 18HF25672FD667E1D4 1GB
Latency
110
Read speed
3,172.2
Write speed
1,974.7
№
2494
RAM
Samsung M395T5663CZ4-CE66 1GB
Latency
110
Read speed
2,787.2
Write speed
2,144.4
№
2495
RAM
SK Hynix HYMP125F72CP8N3-Y5 2GB
Latency
110
Read speed
3,116.2
Write speed
2,090.1
№
2496
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8E4-Y5 1GB
Latency
110
Read speed
3,319.3
Write speed
2,468.7
№
2497
RAM
Elpida EBE41FE4ABHD-6E-E 2GB
Latency
110
Read speed
3,285.1
Write speed
2,156.5
№
2498
RAM
Smart Modular SG2567FBD28452IBD5 2GB
Latency
110
Read speed
2,756.9
Write speed
2,129.8
№
2499
RAM
Elpida EBE81FF4ABHT-6E-E 8GB
Latency
110
Read speed
2,659.0
Write speed
2,030.8
№
2500
RAM
Samsung M3 93T5750EZA-CE6 2GB
Latency
111
Read speed
2,805.8
Write speed
2,375.6
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Ultimi confronti
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-8GTZKO 8GB
Samsung M393B2G70BH0-YK0 16GB
Apacer Technology D22.23263S.002 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4B16G4J2400A16K2-O 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Super Talent F24EB8GS 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMT16GX4M2C3200C16 8GB
A-DATA Technology AD73I1C1674EV 4GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Kingston 9905403-011.A03LF 2GB
Kingston 9905625-097.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-4GFX 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
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