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Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
2481
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8D2-Y5 1GB
Latency
108
Read speed
3,301.1
Write speed
1,941.0
№
2482
RAM
Elpida EBE21UE8AESA-8G-E 2GB
Latency
108
Read speed
2,008.9
Write speed
1,911.7
№
2483
RAM
Kingston GM431-QAA-INTD1F 2GB
Latency
109
Read speed
2,775.5
Write speed
1,716.3
№
2484
RAM
Samsung M395T1G60QJ4-CE68 8GB
Latency
109
Read speed
2,867.7
Write speed
2,247.1
№
2485
RAM
Samsung M395T2863QZ4-CE65 512MB
Latency
109
Read speed
3,034.2
Write speed
1,969.9
№
2486
RAM
Qimonda 72T256220EP3SB2 2GB
Latency
109
Read speed
3,211.5
Write speed
2,505.9
№
2487
RAM
Micron Technology 36HTF25672PY-667F1 2GB
Latency
109
Read speed
3,049.1
Write speed
2,981.1
№
2488
RAM
Samsung M395T6553EZ4-CE66 512MB
Latency
109
Read speed
3,351.5
Write speed
1,831.1
№
2489
RAM
Qimonda 72T512920EP3SC2 4GB
Latency
109
Read speed
2,683.4
Write speed
2,554.2
№
2490
RAM
SK Hynix HYMP125F72CP8D3-Y5 2GB
Latency
109
Read speed
2,441.0
Write speed
1,719.3
№
2491
RAM
Smart Modular SG2567FBD12851HCDL 1GB
Latency
109
Read speed
2,995.0
Write speed
2,252.9
№
2492
RAM
Nanya Technology NT2GT72U4NA3BN-3C 2GB
Latency
110
Read speed
2,702.3
Write speed
1,646.3
№
2493
RAM
Micron Technology 18HF25672FD667E1D4 1GB
Latency
110
Read speed
3,172.2
Write speed
1,974.7
№
2494
RAM
Samsung M395T5663CZ4-CE66 1GB
Latency
110
Read speed
2,787.2
Write speed
2,144.4
№
2495
RAM
SK Hynix HYMP125F72CP8N3-Y5 2GB
Latency
110
Read speed
3,116.2
Write speed
2,090.1
№
2496
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8E4-Y5 1GB
Latency
110
Read speed
3,319.3
Write speed
2,468.7
№
2497
RAM
Elpida EBE41FE4ABHD-6E-E 2GB
Latency
110
Read speed
3,285.1
Write speed
2,156.5
№
2498
RAM
Smart Modular SG2567FBD28452IBD5 2GB
Latency
110
Read speed
2,756.9
Write speed
2,129.8
№
2499
RAM
Elpida EBE81FF4ABHT-6E-E 8GB
Latency
110
Read speed
2,659.0
Write speed
2,030.8
№
2500
RAM
Samsung M3 93T5750EZA-CE6 2GB
Latency
111
Read speed
2,805.8
Write speed
2,375.6
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Últimas comparaciones
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5702-101.A00G 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Samsung M393B1K70QB0-CK0 8GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMT64GX4M8X3600C18 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Kingston 99U5584-001.A00LF 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Kingston 99U5403-468.A00LF 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43CB1-CTD 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CM4X16GE2666C18S2 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Samsung M3 78T5663FB3-CF7 2GB
Corsair CM4X16GE2400Z16K4 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Transcend Information TS2GLH64V4B 16GB
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