RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1を選択
RAM 2を選択
比較する
DDR2 RAMリスト
すべてのメモリモジュール、レイテンシーの高い順に並べ替え
№
帯域幅
レイテンシー、ns
読み出し速度、GB/s
書き込み速度、GB/秒
№
2481
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8D2-Y5 1GB
Latency
108
Read speed
3,301.1
Write speed
1,941.0
№
2482
RAM
Elpida EBE21UE8AESA-8G-E 2GB
Latency
108
Read speed
2,008.9
Write speed
1,911.7
№
2483
RAM
Kingston GM431-QAA-INTD1F 2GB
Latency
109
Read speed
2,775.5
Write speed
1,716.3
№
2484
RAM
Samsung M395T1G60QJ4-CE68 8GB
Latency
109
Read speed
2,867.7
Write speed
2,247.1
№
2485
RAM
Samsung M395T2863QZ4-CE65 512MB
Latency
109
Read speed
3,034.2
Write speed
1,969.9
№
2486
RAM
Qimonda 72T256220EP3SB2 2GB
Latency
109
Read speed
3,211.5
Write speed
2,505.9
№
2487
RAM
Micron Technology 36HTF25672PY-667F1 2GB
Latency
109
Read speed
3,049.1
Write speed
2,981.1
№
2488
RAM
Samsung M395T6553EZ4-CE66 512MB
Latency
109
Read speed
3,351.5
Write speed
1,831.1
№
2489
RAM
Qimonda 72T512920EP3SC2 4GB
Latency
109
Read speed
2,683.4
Write speed
2,554.2
№
2490
RAM
SK Hynix HYMP125F72CP8D3-Y5 2GB
Latency
109
Read speed
2,441.0
Write speed
1,719.3
№
2491
RAM
Smart Modular SG2567FBD12851HCDL 1GB
Latency
109
Read speed
2,995.0
Write speed
2,252.9
№
2492
RAM
Nanya Technology NT2GT72U4NA3BN-3C 2GB
Latency
110
Read speed
2,702.3
Write speed
1,646.3
№
2493
RAM
Micron Technology 18HF25672FD667E1D4 1GB
Latency
110
Read speed
3,172.2
Write speed
1,974.7
№
2494
RAM
Samsung M395T5663CZ4-CE66 1GB
Latency
110
Read speed
2,787.2
Write speed
2,144.4
№
2495
RAM
SK Hynix HYMP125F72CP8N3-Y5 2GB
Latency
110
Read speed
3,116.2
Write speed
2,090.1
№
2496
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8E4-Y5 1GB
Latency
110
Read speed
3,319.3
Write speed
2,468.7
№
2497
RAM
Elpida EBE41FE4ABHD-6E-E 2GB
Latency
110
Read speed
3,285.1
Write speed
2,156.5
№
2498
RAM
Smart Modular SG2567FBD28452IBD5 2GB
Latency
110
Read speed
2,756.9
Write speed
2,129.8
№
2499
RAM
Elpida EBE81FF4ABHT-6E-E 8GB
Latency
110
Read speed
2,659.0
Write speed
2,030.8
№
2500
RAM
Samsung M3 93T5750EZA-CE6 2GB
Latency
111
Read speed
2,805.8
Write speed
2,375.6
«
122
123
124
125
126
127
»
最新の比較
Samsung M4 70T2953EZ3-CE6 1GB
Golden Empire CL17-17-17 D4-2400 16GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Kingston 99U5663-006.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Kingston 9905403-134.A00LF 2GB
Kingston KF3600C17D4/8GX 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905734-063.A00G 32GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C17-8GTRS 8GB
Samsung M471B1G73BH0-YK0 8GB
Kingston X5H5PW-MIE 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMK16GX4M4A2133C13 4GB
バグを報告する
×
Bug description
Source link