RAM
DDR5
DDR4
DDR3
DDR2
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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2481
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8D2-Y5 1GB
Latency
108
Read speed
3,301.1
Write speed
1,941.0
№
2482
RAM
Elpida EBE21UE8AESA-8G-E 2GB
Latency
108
Read speed
2,008.9
Write speed
1,911.7
№
2483
RAM
Kingston GM431-QAA-INTD1F 2GB
Latency
109
Read speed
2,775.5
Write speed
1,716.3
№
2484
RAM
Samsung M395T1G60QJ4-CE68 8GB
Latency
109
Read speed
2,867.7
Write speed
2,247.1
№
2485
RAM
Samsung M395T2863QZ4-CE65 512MB
Latency
109
Read speed
3,034.2
Write speed
1,969.9
№
2486
RAM
Qimonda 72T256220EP3SB2 2GB
Latency
109
Read speed
3,211.5
Write speed
2,505.9
№
2487
RAM
Micron Technology 36HTF25672PY-667F1 2GB
Latency
109
Read speed
3,049.1
Write speed
2,981.1
№
2488
RAM
Samsung M395T6553EZ4-CE66 512MB
Latency
109
Read speed
3,351.5
Write speed
1,831.1
№
2489
RAM
Qimonda 72T512920EP3SC2 4GB
Latency
109
Read speed
2,683.4
Write speed
2,554.2
№
2490
RAM
SK Hynix HYMP125F72CP8D3-Y5 2GB
Latency
109
Read speed
2,441.0
Write speed
1,719.3
№
2491
RAM
Smart Modular SG2567FBD12851HCDL 1GB
Latency
109
Read speed
2,995.0
Write speed
2,252.9
№
2492
RAM
Nanya Technology NT2GT72U4NA3BN-3C 2GB
Latency
110
Read speed
2,702.3
Write speed
1,646.3
№
2493
RAM
Micron Technology 18HF25672FD667E1D4 1GB
Latency
110
Read speed
3,172.2
Write speed
1,974.7
№
2494
RAM
Samsung M395T5663CZ4-CE66 1GB
Latency
110
Read speed
2,787.2
Write speed
2,144.4
№
2495
RAM
SK Hynix HYMP125F72CP8N3-Y5 2GB
Latency
110
Read speed
3,116.2
Write speed
2,090.1
№
2496
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8E4-Y5 1GB
Latency
110
Read speed
3,319.3
Write speed
2,468.7
№
2497
RAM
Elpida EBE41FE4ABHD-6E-E 2GB
Latency
110
Read speed
3,285.1
Write speed
2,156.5
№
2498
RAM
Smart Modular SG2567FBD28452IBD5 2GB
Latency
110
Read speed
2,756.9
Write speed
2,129.8
№
2499
RAM
Elpida EBE81FF4ABHT-6E-E 8GB
Latency
110
Read speed
2,659.0
Write speed
2,030.8
№
2500
RAM
Samsung M3 93T5750EZA-CE6 2GB
Latency
111
Read speed
2,805.8
Write speed
2,375.6
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Najnowsze porównania
Kingston 9905316-106.A02LF 1GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905701-020.A00G 16GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Corsair CM5S16GM4800A40K2 16GB
SK Hynix HMT351S6EFR8A-PB 4GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3600C19-16GSXWB 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Corsair CMX8GX3M2A1600C11 4GB
Kingston KF3200C16D4/8GX 8GB
A-DATA Technology AD73I1B1672EG 2GB
Team Group Inc. DDR4 3600 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3200C16-4GVK 4GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C18-32GVK 32GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
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