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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2481
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8D2-Y5 1GB
Latency
108
Read speed
3,301.1
Write speed
1,941.0
№
2482
RAM
Elpida EBE21UE8AESA-8G-E 2GB
Latency
108
Read speed
2,008.9
Write speed
1,911.7
№
2483
RAM
Kingston GM431-QAA-INTD1F 2GB
Latency
109
Read speed
2,775.5
Write speed
1,716.3
№
2484
RAM
Samsung M395T1G60QJ4-CE68 8GB
Latency
109
Read speed
2,867.7
Write speed
2,247.1
№
2485
RAM
Samsung M395T2863QZ4-CE65 512MB
Latency
109
Read speed
3,034.2
Write speed
1,969.9
№
2486
RAM
Qimonda 72T256220EP3SB2 2GB
Latency
109
Read speed
3,211.5
Write speed
2,505.9
№
2487
RAM
Micron Technology 36HTF25672PY-667F1 2GB
Latency
109
Read speed
3,049.1
Write speed
2,981.1
№
2488
RAM
Samsung M395T6553EZ4-CE66 512MB
Latency
109
Read speed
3,351.5
Write speed
1,831.1
№
2489
RAM
Qimonda 72T512920EP3SC2 4GB
Latency
109
Read speed
2,683.4
Write speed
2,554.2
№
2490
RAM
SK Hynix HYMP125F72CP8D3-Y5 2GB
Latency
109
Read speed
2,441.0
Write speed
1,719.3
№
2491
RAM
Smart Modular SG2567FBD12851HCDL 1GB
Latency
109
Read speed
2,995.0
Write speed
2,252.9
№
2492
RAM
Nanya Technology NT2GT72U4NA3BN-3C 2GB
Latency
110
Read speed
2,702.3
Write speed
1,646.3
№
2493
RAM
Micron Technology 18HF25672FD667E1D4 1GB
Latency
110
Read speed
3,172.2
Write speed
1,974.7
№
2494
RAM
Samsung M395T5663CZ4-CE66 1GB
Latency
110
Read speed
2,787.2
Write speed
2,144.4
№
2495
RAM
SK Hynix HYMP125F72CP8N3-Y5 2GB
Latency
110
Read speed
3,116.2
Write speed
2,090.1
№
2496
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72CP8E4-Y5 1GB
Latency
110
Read speed
3,319.3
Write speed
2,468.7
№
2497
RAM
Elpida EBE41FE4ABHD-6E-E 2GB
Latency
110
Read speed
3,285.1
Write speed
2,156.5
№
2498
RAM
Smart Modular SG2567FBD28452IBD5 2GB
Latency
110
Read speed
2,756.9
Write speed
2,129.8
№
2499
RAM
Elpida EBE81FF4ABHT-6E-E 8GB
Latency
110
Read speed
2,659.0
Write speed
2,030.8
№
2500
RAM
Samsung M3 93T5750EZA-CE6 2GB
Latency
111
Read speed
2,805.8
Write speed
2,375.6
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Последние сравнения
Kingston 99U5584-007.A00LF 4GB
Kingston 9905700-025.A00G 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMT32GX4M2Z3600C18 16GB
Kingston 9905403-011.A03LF 2GB
Team Group Inc. DDR4 3600 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
G Skill Intl F4-4400C19-32GVK 32GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905622-055.A00G 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston 9905678-138.A00G 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
A-DATA Technology DDR4 2400 16GB
Corsair CMWX16GC3200C16W4 16GB
Crucial Technology CT8G48C40U5.M4A1 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3200C14-32GTRS 32GB
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