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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Samsung M378B5173QH0-CK0 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Overall score
Samsung M378B5173QH0-CK0 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
43
Around 37% lower latency
Faster write speed, GB/s
8.9
8.2
Average value in the tests
Reasons to consider
Samsung M378B5173QH0-CK0 4GB
Report a bug
Faster reading speed, GB/s
13.9
13.2
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
27
43
Read speed, GB/s
13.2
13.9
Write speed, GB/s
8.9
8.2
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2245
2216
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
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Absolute Latency
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