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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Samsung M378B5173QH0-CK0 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

总分
star star star star star
Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 43
    左右 37% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 8.2
    测试中的平均数值
Samsung M378B5173QH0-CK0 4GB 需要考虑的原因
Samsung M378B5173QH0-CK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 13.2
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 43
  • 读取速度，GB/s
    13.2 left arrow 13.9
  • 写入速度，GB/s
    8.9 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2245 left arrow 2216

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM的比较

G Skill Intl F4-4133C19-8GTZRF 8GB

Samsung M378B5173QH0-CK0 4GB RAM的比较

Kingston 99U5403-468.A00LF 8GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C
Samsung M378B5173QH0-CK0 4GB
Samsung M378B5173QH0-CK0 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMW32GX4M2Z3200C16 16GB
Corsair CMW32GX4M2Z3200C16 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905678-042.A00G 8GB
Kingston 9905678-042.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
内存RAM