RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-GGNHC 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Compare
ASint Technology SSA302G08-GGNHC 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Overall score
ASint Technology SSA302G08-GGNHC 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-GGNHC 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
30
Around 3% lower latency
Faster reading speed, GB/s
12.8
8.8
Average value in the tests
Faster write speed, GB/s
8.9
5.6
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-GGNHC 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
29
30
Read speed, GB/s
12.8
8.8
Write speed, GB/s
8.9
5.6
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2337
1344
ASint Technology SSA302G08-GGNHC 4GB RAM comparisons
Essencore Limited IM48GU88N26-GIIHA 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB
ASint Technology SSA302G08-GGNHC 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
SK Hynix HMA451U7AFR8N-TF 4GB
PNY Electronics PNY 2GB
Kingston 9965589-013.A00G 8GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston HP32D4S2S1ME-8 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
PUSKILL PJ8TFK1GM8 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology C 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology DDR4 3600 8GB
Report a bug
×
Bug description
Source link