Crucial Technology CT102464BF160B-16F 8GB
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB

Crucial Technology CT102464BF160B-16F 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB

Overall score
star star star star star
Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB

Differences

  • Faster reading speed, GB/s
    12.8 left arrow 12.4
    Average value in the tests
  • Faster write speed, GB/s
    9.4 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
  • Below the latency in the PassMark tests, ns
    28 left arrow 29
    Around -4% lower latency

Specifications

Complete list of technical specifications
Crucial Technology CT102464BF160B-16F 8GB
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 28
  • Read speed, GB/s
    12.8 left arrow 12.4
  • Write speed, GB/s
    9.4 left arrow 7.3
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2282 left arrow 1851
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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