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Crucial Technology CT16G4SFRA266.M8FB 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
Crucial Technology CT16G4SFRA266.M8FB 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
Crucial Technology CT16G4SFRA266.M8FB 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT16G4SFRA266.M8FB 16GB
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Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
31
Around -72% lower latency
Faster reading speed, GB/s
20.4
15.2
Average value in the tests
Faster write speed, GB/s
17.2
13.2
Average value in the tests
Specifications
Complete list of technical specifications
Crucial Technology CT16G4SFRA266.M8FB 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
31
18
Read speed, GB/s
15.2
20.4
Write speed, GB/s
13.2
17.2
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3217
3814
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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