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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Samsung M471A1K43EB1-CWE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Samsung M471A1K43EB1-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Overall score
Samsung M471A1K43EB1-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
46
Around 26% lower latency
Reasons to consider
Samsung M471A1K43EB1-CWE 8GB
Report a bug
Faster reading speed, GB/s
16
8.6
Average value in the tests
Faster write speed, GB/s
12.4
5.8
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Samsung M471A1K43EB1-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
46
Read speed, GB/s
8.6
16.0
Write speed, GB/s
5.8
12.4
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1682
2660
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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