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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B5273DH0-CH9 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB vs Samsung M471B5273DH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Overall score
Samsung M471B5273DH0-CH9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
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Below the latency in the PassMark tests, ns
29
47
Around 38% lower latency
Faster reading speed, GB/s
12
9.3
Average value in the tests
Faster write speed, GB/s
8.1
5.9
Average value in the tests
Reasons to consider
Samsung M471B5273DH0-CH9 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B5273DH0-CH9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
29
47
Read speed, GB/s
12.0
9.3
Write speed, GB/s
8.1
5.9
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2171
1413
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
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Absolute Latency
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