RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Transcend Information TS512MLH64V1H 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Overall score
Transcend Information TS512MLH64V1H 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Report a bug
Reasons to consider
Transcend Information TS512MLH64V1H 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
30
Around -30% lower latency
Faster reading speed, GB/s
16.4
8.6
Average value in the tests
Faster write speed, GB/s
11.7
5.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Transcend Information TS512MLH64V1H 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
23
Read speed, GB/s
8.6
16.4
Write speed, GB/s
5.4
11.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1344
2575
Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM comparisons
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRR 8GB
Transcend Information TS512MLH64V1H 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK16GX4M2F4500C19 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
Samsung M471A5244CB0-CWE 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston KMKYF9-MIH 8GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Mushkin 991586 2GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMG64GX4M2D3600C18 32GB
AMD R5S38G1601U2S 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Kingston KVR16N11/8-SP 8GB
Wilk Elektronik S.A. GR1600D364L11S/4G 4GB
Samsung M378B5673EH1-CF8 2GB
Corsair CM4X16GE2666C18S4 16GB
Samsung M393B1G70BH0-CK0 8GB
TwinMOS 9DEPBOZE-TATP 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston 9905678-121.A00G 8GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905630-030.A00G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-8GSXKB 8GB
Report a bug
×
Bug description
Source link