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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Samsung M471B5273CH0-CH9 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Samsung M471B5273CH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Overall score
Samsung M471B5273CH0-CH9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Report a bug
Below the latency in the PassMark tests, ns
30
48
Around 38% lower latency
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Faster reading speed, GB/s
8.9
8.6
Average value in the tests
Faster write speed, GB/s
5.9
5.4
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Samsung M471B5273CH0-CH9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
30
48
Read speed, GB/s
8.6
8.9
Write speed, GB/s
5.4
5.9
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1344
1420
Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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