Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Samsung M471B5273CH0-CH9 4GB

Punteggio complessivo

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Punteggio complessivo

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT351S6

Al di sotto della latenza nei test PassMark, ns

30 48

Intorno 38% latenza inferiore

Samsung M471B5273CH0-CH9 4GB

Motivi da considerare
Samsung M471B5273CH0-CH9 4GB

Velocità di lettura più elevata, GB/s

8.9 8.6

Valore medio nei test
Velocità di scrittura più elevata, GB/s

5.9 5.4

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Samsung M471B5273CH0-CH9 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

30 48
Velocità di lettura, GB/s

8.6 8.9
Velocità di scrittura, GB/s

5.4 5.9
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1344 1420

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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