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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Samsung M471B5273CH0-CH9 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Overall score
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT351S6 Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 48
    Around 38% lower latency
Samsung M471B5273CH0-CH9 4GB Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
  • Faster reading speed, GB/s
    8.9 left arrow 8.6
    Average value in the tests
  • Faster write speed, GB/s
    5.9 left arrow 5.4
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Samsung M471B5273CH0-CH9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    30 left arrow 48
  • Read speed, GB/s
    8.6 left arrow 8.9
  • Write speed, GB/s
    5.4 left arrow 5.9
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1344 left arrow 1420

Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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