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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Samsung M471B5673FH0-CH9 2GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB vs Samsung M471B5673FH0-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Overall score
Samsung M471B5673FH0-CH9 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
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Below the latency in the PassMark tests, ns
28
41
Around 32% lower latency
Faster reading speed, GB/s
11.8
11.1
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
Samsung M471B5673FH0-CH9 2GB
Report a bug
Faster write speed, GB/s
8.2
7.9
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Samsung M471B5673FH0-CH9 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
28
41
Read speed, GB/s
11.8
11.1
Write speed, GB/s
7.9
8.2
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1920
1348
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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