RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB vs Samsung M471B5673FH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB vs Samsung M471B5673FH0-CH9 2GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Below the latency in the PassMark tests, ns

28 41

Around 32% lower latency
Faster reading speed, GB/s

11.8 11.1

Average value in the tests
Higher memory bandwidth, mbps

12800 10600

Around 1.21% higher bandwidth

Reasons to consider
Samsung M471B5673FH0-CH9 2GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Samsung M471B5673FH0-CH9 2GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)

1920 1348

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns