Kingmax Semiconductor FLFE85F-C8WL9 2GB
Samsung M471B5673EH1-CF8 2GB

Kingmax Semiconductor FLFE85F-C8WL9 2GB vs Samsung M471B5673EH1-CF8 2GB

Overall score
star star star star star
Kingmax Semiconductor FLFE85F-C8WL9 2GB

Kingmax Semiconductor FLFE85F-C8WL9 2GB

Overall score
star star star star star
Samsung M471B5673EH1-CF8 2GB

Samsung M471B5673EH1-CF8 2GB

Differences

  • Higher memory bandwidth, mbps
    10600 left arrow 8500
    Around 1.25% higher bandwidth
  • Below the latency in the PassMark tests, ns
    29 left arrow 70
    Around -141% lower latency
  • Faster reading speed, GB/s
    9.4 left arrow 6.4
    Average value in the tests
  • Faster write speed, GB/s
    6.2 left arrow 4.5
    Average value in the tests

Specifications

Complete list of technical specifications
Kingmax Semiconductor FLFE85F-C8WL9 2GB
Samsung M471B5673EH1-CF8 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    70 left arrow 29
  • Read speed, GB/s
    6.4 left arrow 9.4
  • Write speed, GB/s
    4.5 left arrow 6.2
  • Memory bandwidth, mbps
    10600 left arrow 8500
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-8500, 1.5V, CAS Supported: 6 7 8
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1066 MHz
  • Ranking PassMark (The more the better)
    1071 left arrow 1207
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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