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Micron Technology 16KTF1G64HZ-1G9E2 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Compare
Micron Technology 16KTF1G64HZ-1G9E2 8GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Overall score
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Overall score
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
37
Around 32% lower latency
Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
Faster reading speed, GB/s
21.4
15.4
Average value in the tests
Faster write speed, GB/s
14.3
11.3
Average value in the tests
Higher memory bandwidth, mbps
19200
14900
Around 1.29 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16KTF1G64HZ-1G9E2 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
37
Read speed, GB/s
15.4
21.4
Write speed, GB/s
11.3
14.3
Memory bandwidth, mbps
14900
19200
Other
Description
PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2696
3448
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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