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Micron Technology 16KTF1G64HZ-1G9E2 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

Overall score
star star star star star
Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Overall score
star star star star star
Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Differences Specifications Comments

Differences

Micron Technology 16KTF1G64HZ-1G9E2 8GB Reasons to consider
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 32
    Around 22% lower latency
  • Faster reading speed, GB/s
    15.4 left arrow 9.8
    Average value in the tests
  • Faster write speed, GB/s
    11.3 left arrow 8.6
    Average value in the tests
Samsung 18ASF1G72PDZ-2G1B1 16GB Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 14900
    Around 1.14 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 32
  • Read speed, GB/s
    15.4 left arrow 9.8
  • Write speed, GB/s
    11.3 left arrow 8.6
  • Memory bandwidth, mbps
    14900 left arrow 17000
Other
  • Description
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2696 left arrow 2271

Micron Technology 16KTF1G64HZ-1G9E2 8GB RAM comparisons

SK Hynix HMT41GS6BFR8A-RD 8GB

Samsung 18ASF1G72PDZ-2G1B1 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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